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Detailed performance characteristics of hybrid InP-InGaAsP APDs

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Abstract

Recently low dark current hybrid InP-InGaAsP APDs having an InP avalanche zone and a separate InGaAsP absorbing region have been reported.1,2 Such devices are being considered as detectors for long-wavelength fiber-optic communications. However, such APDs have not yet been thoroughly characterized. The purpose of this paper is to report the detailed characteristics of such APDs that have negligible dark current (ID < 6 nA at M = 30).

© 1981 Optical Society of America

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