Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Double-heterostructure Ga0.47ln0.53As integrated photoreceiver

Not Accessible

Your library or personal account may give you access

Abstract

GalnAs with its electron-hole mobility ratio of ~20-25 and a band gap of 0.75 eV is the best material to make an uncooled photoconductive detector (PcD) for detection of 1.5-μm light. In addition, GalnAs has a 50% higher low-field mobility than GaAs for the same doping level and a peak drift velocity of 2.1 × 107 cm/sec at an electric field strength of 3.8 kV/cm.

© 1981 Optical Society of America

PDF Article
More Like This
Integrated In0.53Ga0.47As PIN/FET Photoreceivers for 1-1.7 μm Wavelengths

R.E. Nahory, R.F. Leheny, E.D. Beebe, J.C. DeWinter, and R.J. Martin
ThC4 Integrated and Guided Wave Optics (IGWO) 1982

Monolithically integrated ln0.53Ga0.47As receiver with voltage-tunable transimpedance

D. C. W. Lo, Y. K. Chung, and S. R. Forrest
TuC4 Integrated Photonics Research (IPR) 1991

Ga0.47In0.53As/InP heterophotodiode with reduced dark current and high quantum efficiency

T. P. Pearsall
TUD6 Optical Fiber Communication Conference (OFC) 1981

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved