Abstract

Ga_0.47In_0.53As photodetectors are well suited for optical fiber telecommunications applications in the 1.1-1.6-µm region of the optical spectrum because these devices^1-3 can be made with high quantum efficiency, low dark current, and are based on the same materials technology as the Ga_xIn_1−xAs_yP_1−y optical emitter materials. However, the photodiode dark current must be <1 nA to have a negligible effect on detection sensitivity in the 1-50-Mbit/sec bit rate range. While the typical dark current in Ga_0.47In_0.53As homostructure diodes is at least 1 order of magnitude lower than that measured in Ge photodiodes, this figure is still several nanoamperes for a diode of dimensions suitable for optical fiber telecommunications (A≅5×10⁻⁵ cm²).

© 1981 Optical Society of America