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Low threshold 1.3-µm GaInAsP/InP buried heterostructure lasers by liquid-phase epitaxy and metal-organic chemical vapor deposition

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Abstract

The GaInAsP/InP quaternary system has been the focus of intense activity in recent years for the development of both sources and detectors in the 1.3-1.55-µm wavelength range, which contains the spectral range of lowest loss and minimum dispersion for the optical fiber. In this paper, we report the demonstration of low threshold cw buried-heterostructure (BH) lasers fabricated by a hybrid combination of LPE and MO-CVD. The difficulties encountered by two-step LPE procedures1 are eliminated by using MO-CVD for the overgrowth of the InP burying layers. Devices with excellent optical linearity and room temperature cw threshold current as low as 57 mA were obtained.

© 1981 Optical Society of America

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