Abstract
Buried heterostructure-type lasers are particularly attractive as light sources for optical fiber communications because of their low threshold current and stable single-mode operation. Problems, however, still remain regarding the current confinement and the device production yield. We have realized a new planar buried heterostructure laser diode (PBH-LD), which is characterized by a unique current confining structure and a flat device surface, in addition to low threshold current and stable oscillation mode characteristics of BH-type lasers.1,2 In this paper, the fabrication and basic characteristics of InGaAsP PBH-LDs at 1.3 and 1.5 μm are described.
© 1981 Optical Society of America
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