Abstract
We have fabricated and characterized a broadband interdigital surface photoconductor with 5-μm electrode separation on GaAs. Characterization has been made using a novel semiconductor laser swept frequency technique. Microwave impedance measurements were made up to 4 GHz. Calculations indicate that with a 1-μm separation in a 50- X 50-μm array, the RC and transit time frequencies will be in excess of 40 GHz.
© 1981 Optical Society of America
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