Abstract
It is widely appreciated that a prerequisite for a DH laser with low threshold current and a well-behaved optical mode is the existence of a builtin optical waveguide and carrier confinement in the plane of the active layer as well as at right angles to it. The buried heterostructure (BH) laser1 is probably the best known example of such a laser structure. Here we report a new embedded stripe geometry AlGaAs DH laser, which possesses a 2-D electrical and optical confinement. Unlike the BH laser, this embedded stripe laser (ESL) is fabricated by a one- step liquid-phase epitaxial growth, which is performed on a GaAs substrate through openings in Si3N4 marks.
© 1981 Optical Society of America
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