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Masked and selective thermal oxidation of GaAs-Ga1−xAlxAs multilayer structure: a new technique for integrated-optic and stripe geometry DH lasers

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Abstract

We describe we believe for the first time the technology of masked and selective thermal oxidation (MSTO) on a GaAs-GaAlAs multilayer structure. Some experimental results on the thermal oxidation of GaAs in air at 495°C and on the properties of thermal oxides are presented. Cr-Au film was adopted successfully as a mask for thermal oxidation on GaAs. Figure 1 shows the cross section of a masked thermal oxidized sample. The actual stripe width of GaAs becomes smaller than the mask since some lateral oxidation occurs. The effectiveness of the metal masking was verified by measurements of the specific contact resistances to heavily doped p-type GaAs after 50-h thermal oxidation, which were of the order of 5 × 10−5 Ω-cm2. Thus the Cr-Au film acts not only as a mask but also as an ohmic contact to p-type GaAs after thermal annealing.

© 1981 Optical Society of America

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