Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA)
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper OW1B.3
  • https://doi.org/10.1364/OEDI.2019.OW1B.3

112Gb/s PAM4 electro-optic modulator based on Thin-film LN-on-insulator

Not Accessible

Your library or personal account may give you access

Abstract

We report the demonstration of a thin-film LiNbO3 modulator with modulation data rate up to 112 Gb/s (56 Gbaud PAM4). The MZI modulator exhibits an electro-optic phase efficiency of V⋅L=2.6V⋅cm and a 6 dB electro-optic bandwidth exceeding 60 GHz.

© 2019 The Author(s)

PDF Article
More Like This
A 112 Gb/s PAM4 Transmitter with Silicon Photonics Microring Modulator and CMOS Driver

Hao Li, Ganesh Balamurugan, Meer Sakib, Jie Sun, Jeffery Driscoll, Ranjeet Kumar, Hasitha Jayatilleka, Haisheng Rong, James Jaussi, and Bryan Casper
Th4A.4 Optical Fiber Communication Conference (OFC) 2019

Up to 360 Gb/s Optical Interconnects with Ultra-high Bandwidth Thin Film Lithium Niobate Modulator

Fan Yang, Xiansong Fang, Xinyu Chen, Yanping Li, and Fan Zhang
M4H.5 Optical Fiber Communication Conference (OFC) 2022

Silicon DC Kerr modulator enhanced by slow light for 112 Gbit/s PAM4

Penghui Xia, Hui Yu, Qiang Zhang, Xiaofei Wang, Zhilei Fu, Qikai Huang, Xiaoqing Jiang, and Jianyi Yang
T2I.1 Asia Communications and Photonics Conference (ACP) 2021

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved