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Germanium metal-semiconductor-metal photodetectors grown on Silicon using low temperature RF-PECVD

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Abstract

This paper presents a direct growth of germanium on silicon using standard RF-PECVD process at substrate temperature of 500°C. Ge Metal-Semiconductor-Metal photodetectors (MSM) are fabricated based on this growth. The structural characterization of the Ge layers and the electrical and optical properties of the fabricated MSM are investigated.

© 2017 Optical Society of America

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