Abstract
The explosive increase in internet traffic requires cost-effective optical networks between and within datacenters. However, to build these cost-effective networks, we need to fundamentally change how we manufacture InP-based photonic devices. InP/Si photonic integrated circuits (PICs) using silicon-photonics technologies are promising for such short-distance communications. Silicon-photonics technologies enable the integration of several functional devices except for lasers on a single compact chip, which can dramatically reduce assembly and packaging costs. Therefore, a cost-effective way to integrate InP-based active devices on a silicon-based platform is strongly desired. In this context, we have developed a new III-V/Si integration scheme in which an InP membrane is directly bonded to SiO2/Si substrate (InP-on-insulator) as an epitaxial template. Compared with a direct-growth scheme, this scheme solves the problems of lattice mismatch and the formation of anti-phase boundaries. In addition, we overcame the crystal degradation due to the difference in coefficient of thermal expansion, by keeping the III-V layer thickness at less than ~400 nm. Using this technique, we have so far developed energy-efficient >25-Gbit/s directly modulated lasers (DMLs) [1, 2].
© 2019 Japan Society of Applied Physics, The Optical Society (OSA)
PDF ArticleMore Like This
Takuro Fujii, Koji Takeda, Hidetaka Nishi, and Shinji Matsuo
Tu3K.2 Optical Fiber Communication Conference (OFC) 2018
Takuro Fujii, Tomonari Sato, Koji Takeda, Tatsurou Hiraki, Takuma Aihara, and Shinji Matsuo
ITu4B.5 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2022
Takuro Fujii, Tomonari Sato, Nikolaos-Panteleimon Diamantopoulos, Koji Takeda, Hidetaka Nishi, Takuma Tsurugaya, Tai Tsuchizawa, and Shinji Matsuo
W1B.2 Optical Fiber Communication Conference (OFC) 2021