Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • JSAP-OSA Joint Symposia 2019 Abstracts
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper 19p_E215_3

Terahertz radiation generated by acoustic waves in InGaN/GaN Multiple Quantum Wells

Not Accessible

Your library or personal account may give you access

Abstract

InGaN/GaN multiple quantum wells (MQWs) are widely studied for light emitting diodes (LEDs) and laser diodes (LDs). However, the lattice mismatch and miscibility between GaN and InN, the diffusion and segregation of indium in MQW due to high-temperature growth, change the potential distribution in MQW, results in degradation of the optical properties of devices. Therefore, if a nondestructive evaluation method of the potential change in the MQW structure can be realized, it can greatly contribute to the improvement of LDs and LEDs with MQWs. We have been conducting research using laser-induced terahertz (THz) emission as an evaluation method for semiconductor surfaces and interfaces [1, 2]. In this study, we observed THz emissions from InGaN/GaN MQWs excited by a femtosecond (fs) laser and investigated generation mechanism of THz waves based on detailed characterization of the THz emissions with the aim of developing it as an evaluation method of MQW in the future.

© 2019 Japan Society of Applied Physics, The Optical Society (OSA)

PDF Article
More Like This
High-Power Terahertz Generation due to Dipole Radiation within InGaN/GaN Multiple Quantum Wells

Guan Sun, Guibao Xu, Yujie J. Ding, Hongping Zhao, Guangyu Liu, Jing Zhang, and Nelson Tansu
CMM4 CLEO: Science and Innovations (CLEO:S&I) 2011

Bias-Controlled Coherent Acoustic Phonon Generation in InGaN/GaN Multiple-Quantum-Wells Light Emitting Diodes

Pei-Hsun Wang, Yu-Chieh Wen, Shi-Hao Guol, Hung-Cheng Lin, Peng-Ren Cheng, Jin-Wei Shi, Jen-Inn Chyi, Chih-Ming Lai, and Chi-Kuang Sun
IWD5 International Quantum Electronics Conference (IQEC) 2009

Impact of Barrier Height on the Interwell Carrier Transport in InGaN/(In)GaN Multiple Quantum Wells

Saulius Marcinkevičius, Rintat Yapparov, Leah Y. Kuritzky, Shuji Nakamura, and James S. Speck
JW2A.27 Advanced Solid State Lasers (ASSL) 2019

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved