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Conferences > IPRSN > 2019 > IW3A > IW3A.4
  • OSA Advanced Photonics Congress (AP) 2019 (IPR, Networks, NOMA, SPPCom, PVLED)
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper IW3A.4

III-V Compound Avalanche Photodiodes on Silicon

Yuan Yuan, Daehwan Jung, Keye Sun, Jiyuan Zheng, Andrew H. Jones, John E. Bowers, and Joe C. Campbell

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Abstract

We demonstrate the first III-V avalanche photodiodes grown directly on silicon by heteroepitaxy. The InGaAs/InAlAs APD exhibits gain > 20, low dark current, quantum efficiency > 40%, and low excess noise (k value ~0.2).

© 2019 The Author(s)

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