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Conferences > IPRSN > 2018 > IW3B > IW3B.2

110 Attojoule-per-bit Graphene Plasmon Modulator on Silicon

Rubab Amin, Sikandar Khan, Cheol J. Lee, Hamed Dalir, and Volker J. Sorger

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Abstract

We demonstrate a plasmonic Graphene-based electro-absorption modulator heterogeneously integrated in Silicon photonics consuming 110 aJ/bit and being 15 μm compact. We show how the plasmonic metal enables steep switching via improved contact resistance.

© 2018 The Author(s)

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