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Conferences > IPRSN > 2018 > ITh1B > ITh1B.4

Consequences of Non-uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers

A. Sakanas, Y. Yu, E. Semenova, L. Ottaviano, H. K. Sahoo, J. Mørk, and K. Yvind

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Abstract

E-beam metrology is employed to investigate the consequences of non-uniform expansion of 250nm InP layer bonded to Si substrate by BCB and direct wafer bonding for the performance of photonic crystal lasers with buried heterostructures.

© 2018 The Author(s)

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