Abstract
We demonstrate the first heterogeneously integrated laser around 1550 nm on a silicon-nitride-on-insulator chip. Single-mode lasing at room temperature is achieved in a silicon nitride cavity comprising an adiabatically tapered III-V amplifier.
© 2019 The Author(s)
PDF ArticleMore Like This
Camiel Op de Beeck, Lukas Elsinger, Bahawal Haq, Günther Roelkens, and Bart Kuyken
FTu5C.6 Frontiers in Optics (FiO) 2019
Dennis Maes, Gunther Roelkens, Mohammed Zaknoune, Camiel Op de Beeck, Stijn Poelman, Maximilien Billet, Muhammad Muneeb, Sam Lemey, Emilien Peytavit, and Bart Kuyken
ck_4_3 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2021
Adarsh Ananthachar, Maria Kotlyar, Samir Ghosh, Sarvagya Dwivedi, Simone Iadanza, Liam O'Faolain, Shamsul Arafin, and Brian Corbett
IM3B.6 Integrated Photonics Research, Silicon and Nanophotonics (IPR) 2022