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Soliton Pulse Gated InGaAs/InP Avalanche Photodiode for Low Dark Count Rate Single Photon Detection

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Abstract

A mathematical model for dark count rate of soliton pulse gated InGaAs/InP SPAD is developed. The results are compared with experimental counts of Gaussian gating. Simulation results show that Soliton gating width reduced the DCR.

© 2017 Optical Society of America

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