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Conferences > FiO > 2010 > FMH > FMH1

Monolithic Ge-on-Si lasers

Jifeng Liu, Xiaochen Sun, Rodolfo Camacho-Aguilera, Yan Cai, Lionel C. Kimerling, and Jurgen Michel

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Abstract

We demonstrate monolithic Ge-on-Si lasers, band-engineered by tensile strain and n-type doing, that exhibit direct gap emission around 1600 nm at room temperature. Direct gap electroluminescence from heterojunction devices verifies the feasibility of electrical pumping.

© 2010 Optical Society of America

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