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Enhanced Photo Response at Two-micron-wavelength Using GeSn/Ge Multiple-Quantum-Well Waveguide

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Abstract

GeSn multiple-quantum-well rib waveguide on Si substrate was fabricated with vertical p-i-n photodiode structure and was characterized at two-micron-wavelength. Enhanced external photo response was achieved as compared to surface-illuminated counterparts, thanks to the waveguide scheme.

© 2019 The Author(s)

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