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Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si

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Abstract

SiGeSn/GeSn/SiGeSn single and multiple quantum well (MQW) structures were characterized. The SiGeSn barriers provide a strong carrier confinement with sufficient barrier height, leading to the lasing with MQW device up to 90 K.

© 2019 The Author(s)

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