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Conferences > CLEO_SI > 2019 > STh3O > STh3O.5

Pseudo-van der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates

Che-yu Liu, Wonsik Choi, Hsien-chih Huang, Jeongdong Kim, Kyooho Jung, Weidong Zhou, Haochung Kuo, and Xiuling Li

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Abstract

n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively.

© 2019 The Author(s)

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