Abstract
We report record-high-Q SiC microresonators on a 3C-SiC-on-insulator platform with ultra-low (~1.4 Å) roughness after chemical-mechanical polishing. We demonstrate Qs of 242,000 at 1550 nm, 112,000 at 780 nm, and 83,000 at 650 nm.
© 2019 The Author(s)
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