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Fabrication of High-Q, High-Confinement 4H-SiC Microring Resonators by Surface Roughness Reduction

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Abstract

We improve the Q of SiC microring resonators with a sub-micron cross-sectional dimension by a factor of six by reducing surface roughness. We achieve a high Q (~73,000) for such a device with anomalous dispersion.

© 2019 The Author(s)

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