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Electrically-Induced Absorption Silicon-Plasmonic Modulator with 70nm Bandwidth

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Abstract

We present an electrically-induced absorption plasmonic modulator on silicon platform with 3 μm length using transparent conductive oxide filled in Au slot waveguide. We experimentally demonstrated 1.5dB/μm extinction ratio over 70 nm optical bandwidth.

© 2018 The Author(s)

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