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InP-based Quantum Cascade Lasers Monolithically Integrated onto Si and GaAs Substrates

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Abstract

Operation of InP-based quantum cascade lasers (QCL) processed from structures grown on 6-inch Si and GaAs substrates with metamorphic buffers are reported. Results pave the way for the development of ultra-compact Si-based platforms comprising QCLs.

© 2018 The Author(s)

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