Ge-on-Si wavelength division multiplexing components near 4.7 µm

Aditya Malik; Eric J. Stanton; Junqian Liu; Alexander Spott; John E. Bowers

doi:10.1364/CLEO_AT.2018.JW2A.39

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2018),
paper JW2A.39
•https://doi.org/10.1364/CLEO_AT.2018.JW2A.39

Ge-on-Si wavelength division multiplexing components near 4.7 µm

Aditya Malik, Eric J. Stanton, Junqian Liu, Alexander Spott, and John E. Bowers

CLEO: Science and Innovations 2018

San Jose, California United States
13–18 May 2018
ISBN: 978-1-943580-42-2

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Poster Session II (JW2A)

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A. Malik, E. J. Stanton, J. Liu, A. Spott, and J. E. Bowers, "Ge-on-Si wavelength division multiplexing components near 4.7 µm," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2018), paper JW2A.39.

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Abstract

Wavelength division multiplexing components based on Ge-on-Si waveguides are presented for operation near 4.7 µm wavelength. Transmission characteristics of 1×1 and 2×2 MZIs (35 dB extinction) and AWGs (25.7 dB cross-talk) are reported.

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