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InGaAs/InP Multi-quantum-well Nanowires Directly Grown on SOI Substrates and Optical Property Characterizations

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Abstract

InGaAs/InP MQW nanowires were directly grown on SOI substrates by ART technique. Multiple characterizations which applied to reveal the material quality and optical properties, had proved that such MQW nanowire was capable of an active waveguide cavity for potential photonic applications.

© 2018 The Author(s)

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