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High-efficiency and low-loss dielectric metasurfaces on a gallium nitride platform

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Abstract

Epitaxial GaN on sapphire is a promising material platform for low-loss, nonlinear and active metasurfaces at visible wavelengths. We experimentally demonstrate high efficiency dielectric metasurfaces with beam bending and polarization splitting functionalities on this platform.

© 2018 The Author(s)

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