Direct Tunneling Modulation of Semiconductor Lasers

Junyi Qiu; Milton Feng; Nick Holonyak

doi:10.1364/CLEO_AT.2019.ATu3P.2

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 2019),
paper ATu3P.2
•https://doi.org/10.1364/CLEO_AT.2019.ATu3P.2

Direct Tunneling Modulation of Semiconductor Lasers

Junyi Qiu, Milton Feng, and Nick Holonyak

CLEO: Applications and Technology 2019

San Jose, California United States
5–10 May 2019
ISBN: 978-1-943580-57-6

From the session
A&T Topical Review on Progress in the Semiconductor Laser Technology I (ATu3P)

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J. Qiu, M. Feng, and N. Holonyak, "Direct Tunneling Modulation of Semiconductor Lasers," in Conference on Lasers and Electro-Optics, OSA Technical Digest (Optica Publishing Group, 2019), paper ATu3P.2.

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Abstract

Direct tunneling modulation of semiconductor lasers is realized and demonstrated experimentally in the three-terminal transistor laser through the interaction between the photon absorption by voltage-controlled intra-cavity photon-assisted tunneling and the photon generation by quantum-well recombination.

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