Abstract
We have measured a. series of interd.igita.ted photodiodes made on semi-insulating GaAs (SI-GaAs), low-temperature grown GaAs (lt-gaas), and silicon (Si) substrates. These devices were mounted in-line on a coplanar stripline with a characteristic impedance of 55 Ω. Typical detection was (10 μm)2 with finger separations and widths ranging from 50 to 300nm. Metalization was chosen such that Schottky contacts were formed with the SI-GaAs and Si substrates directly, and with LT-GaAs via a 50-nm GaAs buffer layer.
© 1992 Optical Society of America
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