Abstract
Semiconductor injection lasers exhibiting extremely low threshold current are required for many uses. Strained-layer (STL) InGaAs-CaAs QW lasers are currently of considerable and increasing interest. One of the major reasons for this interest is that STL-QW InGaAs lasers offer the potential of much lower threshold current than that of GaAs QW lasers.1 However, this low threshold potential has not been fully demonstrated; until recently, the lowest threshold currents of continuously operated uncoated InGaAs- GaAs QW lasers were in the 2.2-2.77-mA range,2-4 having a threshold close to that of GaAs-AlGaAs QW lasers5 using a SQW structure.
© 1992 Optical Society of America
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