Abstract
We have measured the TE and TM gain recovery dynamics of several different 1.5-μm MQW multiple semiconductor amplifiers. The initial fast recovery (<1 ps) due to the thermalization of the hot inverted carriers with the lattice was measured previously only for TE polarization, where it was found to be of the order of 700 to 1 ps.1 Here we show that this initial recovery time changes by almost a factor of 2 for the two different polarizations. The thermalization time also varies from device to device, but in a single device it is always faster for TM polarizafion.
© 1992 Optical Society of America
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