Abstract
In a type II GaAs/AlAs superlattice CSL), the energetically lowest conduction- band state and the highest valence-band state are confined to Ae GaAs and AlAs layers, respectively. Photoexeitation of the direct transition from the valence to the conduction band at the F-point in the GaAs in such a SL results in a subsequent rapid transfer of the created electrons from the Γ-minimum in the GaAs to the X-minimum in the AlAs.
© 1992 Optical Society of America
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