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Conferences > CLEO > 1992 > CWG > CWG50
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CWG50

Doping profile effects on AlGaAs/GaAs single quantum well lasers

S. M. Shank, J. A. Varriano, and G. W. Wicks

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Abstract

The effects of novel doping profiles on the operating characteristics of SQW AlGaAs/GaAs separate confinement heterostructure (SCH) lasers have been studied. It has been experimentally determined that the transparency current density and threshold current density are significantly reduced by n-type modulation doping the quantum well in the active region of the laser. Reductions of 45% in transparency current density and 30% in threshold current density have been achieved in n-modulation-doped QW lasers compared to corresponding conventional structures.

© 1992 Optical Society of America

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