Abstract

The development of 670-nm InGaAlP diode lasers has led to the recent demonstration of cw diode laser-pumped tunable lasers^1-3 in a number of chromium- doped materials. Although CaAlAs diodes have advantages over InGaAlP devices in terms of overall efficiency, the absorption in Cr-doped materials at wavelengths >750 nm is quite small. Increasing the absorption in the long-wavelength wing of the absorption band by heavily doping a Cr:LiSAF crystal has made it possible to achieve laser action at a pump wavelength of 752 nm⁴.

© 1992 Optical Society of America