Abstract
Semiconductor lasers emitting in the 0.98-µm wavelength regime are promising for pumping optical fiber amplifiers and solid-state lasers. Typical high power 0.98-µm pump lasers have AGaAs optical cladding layers, whose high oxidation rate often causes reliability problems and difficulty for regrowth. This makes it difficult to fabricate reliable and cost-effective buried-heterostructure lasers, distributed feedback lasers, and lasers integrated with other electronic or pho-tonic components. In this paper, we report a laser heterostructure design using stepped InGaAsP as the confinement layers and InGaP as optical claddings in place of the typical GaAs/ AlGaAs design to circumvent the disadvantages of AlGaAs.
© 1992 Optical Society of America
PDF ArticleMore Like This
E. C. Vail, S. F. Lim, Y.-A. Wu, D. A. Francis, C. J. Chang-Hasnain, R. Bhat, C. Caneau, and H. Leblanc
WH16 Optical Fiber Communication Conference (OFC) 1993
Michio Ohkubo, Tetsuro Ijichi, Akira Dcetani, and Toshio Kikuta
CPD24 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992
M. Sagawa, K. Hiramoto, T. Tsuchiya, and S. Tsuji
CThE4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1993