Abstract
Semiconductor high-speed photodectors typically are based on photoconductive effects, where a photocurrent is generated in proportion to the illuminating light intensity. A transient photovoltaic effect in a sawtooth semiconductor super lattice structure was reported several years ago by Capasso et al.1 However, no steady-state photovoltage was observed under continuous light illumination. Here, we report building a novel high-speed photovoltaic detector which responds Jinearly to the continuous light intensity before saturation at high intensities and has a very high response speed. Such a high- speed photovoltaic detector can be used to modulate a transistor directly without the need of a bias or a load resistor.
© 1992 Optical Society of America
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