Abstract
Three-dimensional integration of signal processing circuitry will enable massively parallel processing and the number of interconnections between signal processing circuitry to be increased. We have demonstrated a 3-D integration scheme which optically connects the top of a silicon (Si) wafer to the bottom of the same wafer using monolithically integrated InGaAsP epitaxial lift-off emitters and detectors. This InGaAsP thin film emitter (3.5 μm thick) and detector (1.5 μm thick) operate at λ - 1,26 μm, a wavelength to which Si is transparent. The emitter is integrated onto the polished top of the Si substrate and the aligned detector onto the polished bottom. Light from the emitter passes through the nonabsorbing Si wafer and is incident upon the detector.
© 1992 Optical Society of America
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