Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CThI59

Through silicon wafer optical communication using monolithic thin film epitaxial lift-off InGaAsP emitters and detectors

Not Accessible

Your library or personal account may give you access

Abstract

Three-dimensional integration of signal processing circuitry will enable massively parallel processing and the number of interconnections between signal processing circuitry to be increased. We have demonstrated a 3-D integration scheme which optically connects the top of a silicon (Si) wafer to the bottom of the same wafer using monolithically integrated InGaAsP epitaxial lift-off emitters and detectors. This InGaAsP thin film emitter (3.5 μm thick) and detector (1.5 μm thick) operate at λ - 1,26 μm, a wavelength to which Si is transparent. The emitter is integrated onto the polished top of the Si substrate and the aligned detector onto the polished bottom. Light from the emitter passes through the nonabsorbing Si wafer and is incident upon the detector.

© 1992 Optical Society of America

PDF Article
More Like This
Bidirectional communication through stacked silicon circuitry by using integrated thin-film InP-based emitters and detectors

C. Camperi-Ginestet, B. Buchanan, N. M. Jokerst, and M. A. Brooke
CFF3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1995

Epitaxial lift-off for wafer-scale CaAs-on-Si semi-monolithic integration

Wei Chang, Mark Goertemiller, Ashish Verma, and Eli Yablonovitch
CFC8 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996

Integration of InP-Based Thin Film Emitters and Detectors Onto a Single Silicon Circuit

C. Camperi-Ginestet, B. Buchanan, S. Wilkinson, N.M. Jokerst, and M.A. Brooke
OTuC2 Optical Computing (IP) 1995

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved