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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CThI31

Control of an interface polariton dispersion relation in a Schottky-barrier metal-semiconductor structure

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Abstract

Electric driving of the dispersion law (DL) of an interface plasmon polariton (IPP) propagating in a Schottky-barrier polariton–active structure metal (1)-semi-conductor (2), see Fig. 1(a), is proposed. An electric bias applied to this structure results in the change of thickness D of the depletion region at the metal-semiconductor interface and, hence, in the change of the DL of IPP in this three-layer structure. This method may also be employed in hetero- and homojunction and in MIS-structures.

© 1992 Optical Society of America

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