Abstract
The strain-induced change of energy levels in semiconductors can result in novel structures with improved optical properties.1,2 Previous measurements indicate that such improvement may have reduced the threshold of InGaAs QW lasers compared to their GaAs/ AIGaAs counterparts,3,4 but these results are not easily quantified because of the difficulty in separating the intrinsic material properties and that of the optical cavity. Here we report a direct experimental study of optical nonlinearities in InGaAs/CaAs strained-layer MQWs, and compare the results with that of unstrained GaAs/ AlGaAs MQWs. We also demonstrate a high-contrast submilliwatt-power modulator using the nonlinearities of the strained quantum well.
© 1992 Optical Society of America
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