Abstract
Several IR FPA applications require array size, producibility, or low cost more than sensitivity. PtSi has had success by meeting some of these needs in the MWIR spectral band for cases compatible with 3.4-4.1 μm spectral bandpass. The long wavelength spectral region (LWIR, 7.5-12 μm) has, as yet, no comparably mature technology. IrSi has been investigated as a potentially cost-effective LWIR detector, but has dark current limitations that translate to the need for cooling below LN2 temperatures. We are therefore evaluating quantum well infrared photodetectors (QWIP) in the GaAs/AlGaAs material system as a possible solution.
© 1992 Optical Society of America
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