Abstract

Diode lasers emitting between 2 and 5 pm would be useful for applications such as laser radar exploiting atmospheric transmission windows, remote sensing of atmospheric gases, and molecular spectroscopy. Lasers consisting of a GaInAsSb active region and AlGaAsSb confining layers have shown good performance because this structure can provide the high level of electrical and optical confinement necessary for efficient laser operation. In this paper, we describe recent progress in GaInAsSb/ AIGaAsSb diode lasers, including the results obtained for what we believe to be the first such lasers with a QW active region.

© 1992 Optical Society of America