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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CMC6

All-optical photonic switches by the monolithic integration of inverted asymmetric Fabry-Perot modulators/detectors and heterojunction phototransistors

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Abstract

Optically addressable spatial light modulators are an important class of device for optical signal processing and interconnection.1-3 Multiple quantum well (MQW)-based symmetric self-electrooptic effect devices' usually have low contrast and no optical gain. Also, complicated optical beam isolation is needed since the optical beams access the detector and the modulator from the same side of the chip. On the other hand, a vertically integrated AlGaAs/GaAs-based tight modulator and a heterojunction phototransistor (HPT)2 allows the read and write beams to access from opposite sides of the device. However, it requires removing the GaAs substrate in a patterned fashion since the GaAs substrate is opaque at the operating wavelengths. This is technically difficult to achieve at high resolution and on a large scale. By contrast, using an InGaAs/GaAs MQW for a light modulator in an inverted cavity asymmetric Fabry-Perot (ASFP) configuration, one can take advantage of the transparency of the GaAs substrate at the operating wavelength by allowing the light to pass in and out through the (antireflection coated) substrate, the high contrast ratio, and the throughput available from ASFP modulators. Here we report the demonstration of all-optical photonic switches using GaAs/AlGaAs-based HPTs monolithically integrated on top of strained InGaAs/GaAs MQW-based inverted cavity ASFP modulators.

© 1992 Optical Society of America

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