Abstract

There has been growing interest in the possibility of developing integrated circuits that combine optical and electronic devices on a single monolithic GaAs/Si substrate. Although monolithic integration of LEDs and Si MOSFETs has been reported, monolithic integration of laser and GaAs metal-semiconductor field effect transistor (MESFET) on a GaAs/Si substrate has not been reported. In this study we report what we believe to be the first fabrication of a monolithically integrated AlGaAs/GaAs laser and GaAs MESFET grown on a GaAs/Si substrate using selective regrowth by metalorganic chemical vapor deposition (MOCVD).

© 1992 Optical Society of America