Abstract
The InGaAlP semiconductor system has been successfully exploited to produce very efficient visible light lasers of wavelengths around 670 nm.1 However, the extension of the emission to shorter wavelengths, such as 630 nm, has proved difficult to achieve due to the problem of increasing carrier loss, resulting from an overflow into the laser's p-cladding layer, with decreasing wavelength. One method to overcome this problem is the multiquantum barrier (MQB) structure.2,3 This, by quantum mechanical interference of the electron wave function over the quantum barriers, increases the electron reflection coefficient of the active to p-cladding layer barrier.
© 1992 Optical Society of America
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