Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1992),
  • paper CMA2

Improvement, due to a systematically designed mq barrier structure, in the temperature characteristics of a short wavelength InGaAlP laser.

Not Accessible

Your library or personal account may give you access

Abstract

The InGaAlP semiconductor system has been successfully exploited to produce very efficient visible light lasers of wavelengths around 670 nm.1 However, the extension of the emission to shorter wavelengths, such as 630 nm, has proved difficult to achieve due to the problem of increasing carrier loss, resulting from an overflow into the laser's p-cladding layer, with decreasing wavelength. One method to overcome this problem is the multiquantum barrier (MQB) structure.2,3 This, by quantum mechanical interference of the electron wave function over the quantum barriers, increases the electron reflection coefficient of the active to p-cladding layer barrier.

© 1992 Optical Society of America

PDF Article
More Like This
Visible laser diode with a multi quantum barrier and a strained GaInP active layer for high power operation

S. Arimoto, H. Watanabe, T. Kamizato, T. Nishimura, T. Motoda, K. Kadoiwa, E. Omura, M. Aiga, K. Ikeda, and S. Mitsui
CMA3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

Multiquantum barrier—its design and application to semiconductor lasers

K. Iga
CMA1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1992

Design of modified multiple quantum barrier for 600 nm range AIGaInP lasers

Takeshi Takagi, Fumio Koyama, and Kenichi Iga
CWP2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1991

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved