Abstract

The double heterostructure (DH) is being used in most of the present-day semiconductor lasers. The DH provides room temperature cw operation due to its effective carrier and lightwave confinement, To check the electronic current leaking over the heterobarrier of a p-type cladding, >300 meV of builtin potential difference is usually employed; but in some cases, such as high power and high temperature operations, much higher barrier height is required. On the other hand, the heterobarrier height is limited by the material characteristics, e.g., in short wavelength GaAlInP-based red or orange lasers and II-lV-based blue or green ZnCdSSe systems.

© 1992 Optical Society of America