Abstract

The new short-wavelength, all-molecular-beam-epitaxy (MBE) laser has a vertical positive-intrinsic-negative junction with bottom and top mirrors. The Si-doped bottom mirror has 28.5 pairs of an AlAs/Al0.65Ga0 35AS/Al0.3Ga0.7As/Al0.63Ga0.35As quarter-wave stack designed at 780 nm. The undoped spacer region consists of an Al0.14Ga0.86As superlattice sandwiched between two graded AlGaAs (x = 0.3 — 0 65) layers so that the combined optical thickness is a full wave.

© 1991 Optical Society of America

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