Abstract

GaAs/AlGaAs diode lasers fabricated on Si substrates are attractive as potential components of optical interconnects between Si VLSI circuits. Because of the high density of misfit dislocations in GaAs layers grown on Si, such lasers are inferior in performance and reliability to similar devices on GaAs substrates. Attempts to improve the crystal quality have failed to reduce the density below 106 cm−2.

© 1991 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription