Abstract

Most of room temperature continuous-wave (cw) operating lasers on Si have been directly grown (two-step growth technique) by combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) techniques. However, GaAs/Si grown by the two-step growth technique still have such problems as roughness of surface morphology and a high density of dislocations, which are obstacles to fabricating the successful quantum-well lasers on Si.

© 1991 Optical Society of America

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