Considerable progress has been made recently in improving the output power of semiconductor laser amplifiers by the use of multiple quantum well (MQW) active layers at 1.55 μm.1,2 More recently MQW amplifiers at 1.3 μm have been published3 which also exhibit higher saturated output power than bulk devices. In this paper we discuss the dependence on the gain and saturation output powers of 1.3 μm MQW amplifiers on wavelength.

© 1991 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription